RJP30H1 (5x) Encapsulation:TO-220 Silicon N Channel High speed IGBT

USD 13.31 USD

SKU: waWjF292

Condition: New

Tags: -40 °C (-40 °F) 105 °C (221 °F) 220°F (105°C) 30 Days 36.2 dB Bag Common Basis IGBT MHZ n/a Power Transistor Returns Accepted RJP30H1 Seller Surface Mount TO-220F Unbranded/Generic Unit Unknown

Categories: Circuit Breakers & Disconnectors

Specifications

Return Shipping Will Be Paid By	Seller
All Returns Accepted	Returns Accepted
Item Must Be Returned Within	30 Days
MPN	RJP30H1
Transistor Category	Power Transistor
Maximum Operating Frequency	MHZ
Series	N/A
Minimum DC Amplifier Gain	36.2 dB
Configuration	Common Basis
Minimum Operating Temperature	-40 °C (-40 °F)
Country/Region Of Manufacture	Unknown
Maximum DC Collector Current	N/A
Maximum Operating Temperature	105 °C (221 °F)
Model	IGBT
Packaging	Bag
Brand	Unbranded/Generic
Mounting Style	Surface Mount
Package/Case	TO-220F
Type	IGBT
Unit Type	Unit

5PCS RJP30H1 Encapsulation:TO-220 Silicon N Channel High speed IGBT C74 Payment: . Please make the payment within 3 days of auction’s closing. If you do not make within this time frame, the item will be re listed and eBay will be notified of nonpayment. Contact Us: Please contact us with any questions you may have. The easiest way is to use the "Ask a Question" link near the bottom of the description page of this item. We value our customers and we appreciate doing business with you. Feedback: We respond with feedback when feedback has been left for us. Please contact us if you have any concerns prior to posting neutral or negative feedback. We care about our customer’s concerns. PLEASE CHECK OUT OUR FEEDBACK AND BID WITH CONFIDENCE!

RJP30H1 (5x) Encapsulation:TO-220 Silicon N Channel High speed IGBT

Specifications

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