NXP MRF300BN RF Power LDMOS Transistors 1.8 to 250 MHz 50 VDC 300 W New Original
USD 69.99 USD
Specifications
| Brand | NXP |
| Maximum Collector-Emitter Saturation Voltage | 1.0 V |
| Maximum Power Dissipation | 300 W |
| Maximum Operating Frequency | 250 MHz |
| MPN | MRF300BN |
| Maximum Operating Temperature | 105 °C (221 °F) |
| Transistor Category | Power Transistor |
Manufacturer: NXP. Product Category: RF MOSFET Transistors. Product Type: RF MOSFET Transistors. Id - Continuous Drain Current: 30 A. Forward Transconductance - Min: 28 S. Output Power: 330 W. Pd - Power Dissipation: 272 W.
